The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Dec. 24, 2002
Hynix Semiconductor Inc, Kyoungki-Do, KR;
Abstract
A method for forming a silicide layer of a semiconductor memory device is disclosed. A silicide layer is formed in an impurity junction region through a contact hole exposing the impurity junction region on a semiconductor substrate. Here, two thermal annealing processes are performed on the semiconductor substrate on which a metal layer is deposited, by using low and high temperature up speeds and maintaining the semiconductor substrate under the highest temperature for less than one second, and then dropping the temperature at high speed. The process for removing a portion of the metal layer which did not react is carried out. As a result, a shallow junction can be formed in a very small devices, and deterioration of an electrical property of the semiconductor device is minimized by reducing junction leakage current, which results in the rapid operation of the device.