This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 1995.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1995
Title: Chang-Shyan Kao: Innovator in DRAM Technology
Introduction
Chang-Shyan Kao is a notable inventor based in Xinzhuang, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for enhancing the performance of DRAM cells.
Latest Patents
Chang-Shyan Kao holds a patent titled "Method for forming a capacitor in a DRAM cell using a rough overlayer." This innovative method utilizes a rough overlayer, such as a tungsten film, to define multiple pillars in a polysilicon electrode layer. This design increases the surface area of the polysilicon electrode, thereby enhancing the capacitance of the capacitor within a DRAM cell. He has 1 patent to his name.
Career Highlights
Chang-Shyan Kao is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work focuses on improving the efficiency and performance of memory technologies, which are crucial for modern electronic devices.
Collaborations
Some of his notable coworkers include Water Lur and Peter Y Lin, who have also contributed to advancements in semiconductor technology.
Conclusion
Chang-Shyan Kao's innovative approach to DRAM technology exemplifies the importance of research and development in the semiconductor industry. His contributions continue to influence the performance of electronic devices today.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile