Chang Rong Wu

Title: Chang Rong Wu: Innovator in High Aspect Ratio Shallow Trench Isolation Technologies

Introduction

Chang Rong Wu is a prominent inventor based in Banchiau, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the development of methods for shallow trench isolation. With a total of 10 patents to his name, Wu's innovations have advanced the efficiency and effectiveness of semiconductor devices.

Latest Patents

Wu's latest patents include a manufacturing method of a high aspect ratio shallow trench isolation region. This method involves providing a substrate with a trench and placing it into a chamber. A first insulation layer is formed on the substrate and inside the trench using high density plasma chemical vapor deposition. The majority of the first insulation layer outside the trench is then removed through in situ etching, utilizing carbon fluoride as an etching gas. This process allows for the creation of a high aspect ratio shallow trench isolation region without voids. Another notable patent is the manufacturing method for a shallow trench isolation region with high aspect ratio. This method also employs high density plasma chemical vapor deposition and low pressure CVD to achieve a void-free shallow trench isolation.

Career Highlights

Chang Rong Wu is currently associated with Nan Ya Technology Corporation, where he continues to innovate in the semiconductor field. His work has been instrumental in enhancing the manufacturing processes that are critical for modern electronic devices.

Collaborations

Wu has collaborated with notable colleagues such as Hsin-Jung Ho and Yi-Nan Chen, contributing to the advancement of technology in their field.

Conclusion

Chang Rong Wu's contributions to the semiconductor industry through his innovative patents and methods have established him as a key figure in the field. His work continues to influence the development of efficient manufacturing techniques for electronic devices.