The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2003

Filed:

Jan. 25, 2002
Applicant:
Inventors:

Tse-Yao Huang, Taipei, TW;

Chih-Ching Lin, Taoyuan, TW;

Yu-Chi Sun, Pingjen, TW;

Chang Rong Wu, Banchiau, TW;

Shing-Yih Shih, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/1302 ;
Abstract

A method of forming interconnects. An oxide masking layer with patterns is formed overlaying the metal layer. The patterns of the masking layer are transferred into the metal layer so as to form an opening. Then, a silicon nitride liner is conformally formed on the masking layer, the metal layer and the first insulating layer. Next, the silicon nitride liner and the masking layer are partially removed by reactive ion etching to leave a facet mask to reduce the aspect ratio of the opening followed by removal of the remaining silicon nitride liner. Then, an insulating layer is deposited to fill the opening.


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