The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Dec. 17, 2002
Tzu En Ho, Ilan, TW;
Chang Rong Wu, Banchiau, TW;
Tung-Wang Huang, Taipei, TW;
Shing-Yih Shih, Taipei, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method for forming shallow trench isolation. A substrate is provided with a mask layer formed thereon. The mask layer is etched to expose a portion of the substrate, and the portion of the substrate is etched to form a trench. A liner layer is formed on the inside wall of the trench. A first dielectric layer and a sacrificial layer are sequentially deposited on the substrate such that the trench is substantially filled, wherein the first dielectric layer is formed by high density plasma chemical vapor deposition (HDPCVD). Portions of the first dielectric layer and the sacrificial layer are removed from the trench. A second dielectric layer is deposited on the substrate such that the trench is substantially filled, wherein the second dielectric layer is formed by high density plasma chemical vapor deposition (HDPCVD). A portion of the second dielectric layer is removed from the trench.