Tung-Wang Huang

Title: Innovations of Tung-Wang Huang

Introduction

Tung-Wang Huang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative methods for enhancing semiconductor substrates, particularly in the formation of trenches.

Latest Patents

Huang's latest patents include a method of forming a bottle-shaped trench in a semiconductor substrate. This method involves selectively etching the semiconductor substrate to create a trench with distinct top and bottom portions. An oxide film is then applied to the top portion, followed by the formation of a rugged polysilicon layer on both the top and bottom portions. The etching process utilizes diluted ammonia solution to achieve a bottle-shaped trench with a rugged surface. Another patent details the process of forming a bottle-shaped trench, which includes the sequential formation of a pad layer and hard mask layer, followed by the creation of a dielectric layer that fills the trench. The process concludes with the etching of the trench to achieve the desired bottle shape.

Career Highlights

Tung-Wang Huang is currently employed at Nan Ya Technology Corporation, where he continues to innovate in semiconductor technology. His expertise and contributions have positioned him as a key figure in his field.

Collaborations

Huang collaborates with notable colleagues, including Chang Rong Wu and Hsin-Jung Ho, who contribute to his research and development efforts.

Conclusion

Tung-Wang Huang's innovative work in semiconductor technology, particularly in trench formation methods, showcases his significant impact on the industry. His patents reflect a commitment to advancing technology and improving semiconductor manufacturing processes.