Chang-Ken Chen

Title: Chang-Ken Chen: Innovator in Thin Film Transistor Technology

Introduction

Chang-Ken Chen is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of thin film transistors. With a total of 4 patents to his name, Chen's work has had a notable impact on the industry.

Latest Patents

Among his latest patents is a fabricating method of thin film transistors. This invention includes a substrate, a semiconductor layer, a patterned doped semiconductor layer, a source and a drain, a gate insulation layer, and a gate. The semiconductor layer is positioned on the substrate, while the patterned doped semiconductor layer is located on opposite sides of the semiconductor layer. The source and drain are placed on the patterned doped semiconductor layer and the opposite sides of the semiconductor layer. Notably, a part of the semiconductor layer covered by the source and drain has a first thickness, while the part of the semiconductor layer between the source and drain, which is not covered, has a second thickness ranging from 200 μm to 800 μm. The gate insulation layer is situated on the source, drain, and semiconductor layer, with the gate positioned on the gate insulation layer.

Career Highlights

Chang-Ken Chen is currently associated with AU Optronics Corporation, where he continues to innovate in the field of semiconductor technology. His expertise and dedication have positioned him as a key player in the development of advanced electronic components.

Collaborations

Chen collaborates with Hsing-Hung Hsieh, contributing to the advancement of their projects and enhancing the innovation process within their organization.

Conclusion

Chang-Ken Chen's work in thin film transistors exemplifies his commitment to innovation in semiconductor technology. His contributions continue to shape the future of electronic devices and systems.