The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Jun. 21, 2013
AU Optronics Corporation, Hsinchu, TW;
Chang-Ken Chen, Taipei County, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A thin film transistor including a substrate, a semiconductor layer, a patterned doped semiconductor layer, a source and a drain, a gate insulation layer, and a gate is provided. The semiconductor layer is disposed on the substrate. The patterned doped semiconductor layer is disposed on opposite sides of the semiconductor layer. The source and the drain are disposed on the patterned doped semiconductor layer and the opposite sides of the semiconductor layer, wherein a part of the semiconductor layer covered by the source and the drain has a first thickness, a part of the semiconductor layer disposed between the source and the drain and not covered by the source and the drain has a second thickness ranging from 200 Å to 800 Å. The gate insulation layer is disposed on the source, the drain and the semiconductor layer. The gate is disposed on the gate insulation layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile