Chang-I Su

Title: Chang-I Su: Innovator in Thin-Film Transistor Technology

Introduction

Chang-I Su is a prominent inventor based in Shenzhen, China. He has made significant contributions to the field of thin-film transistor technology, holding 2 patents that showcase his innovative approach to electronic devices.

Latest Patents

One of his latest patents is for a low temperature poly-silicon thin-film transistor (LTPS TFT) having a dual-gate structure. This invention proposes a method for forming the LTPS TFT, which includes a substrate and one or more patterned amorphous silicon (a-Si) layers that form a bottom gate. The design features an NMOS and a PMOS disposed on a barrier layer, with the NMOS comprising a patterned gate electrode layer as a top gate. This dual-gate structure enhances the I-V characteristics, driving ability, and production yield while reducing power consumption.

Another notable patent involves a manufacturing method for a flexible display. This method includes forming a silicon layer on a rigid substrate and creating a frame-type silicon layer. A flexible substrate is then attached to the rigid substrate, followed by the formation of a display film. The process ensures that the flexible substrate can be separated from the frame-type silicon layer without damaging the plastic substrate, thus improving yield rates.

Career Highlights

Chang-I Su is currently employed at Shenzhen China Star Optoelectronics Technology Co., Ltd. His work at this company has positioned him as a key player in the development of advanced display technologies.

Collaborations

He collaborates with talented coworkers, including Xiaoxiao Wang and Hsiang Chih Hsiao, who contribute to his innovative projects and research efforts.

Conclusion

Chang-I Su's contributions to thin-film transistor technology and flexible displays highlight his role as a leading inventor in the field. His patents reflect a commitment to innovation and improvement in electronic device manufacturing.