The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Nov. 14, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, CN;
Xiaoxiao Wang, Shenzhen, CN;
Hsiang Chih Hsiao, Shenzhen, CN;
Peng Du, Shenzhen, CN;
Chang-I Su, Shenzhen, CN;
Hongyuan Xu, Shenzhen, CN;
Bo Sun, Shenzhen, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Guangdong, CN;
Abstract
The present invention proposes a low temperature poly-silicon thin-film transistor having a dual-gate structure and a method for forming the low temperature poly-silicon thin-film transistor. The low temperature poly-silicon thin-film transistor includes: a substrate, one or more patterned amorphous silicon (a-Si) layers, disposed in a barrier layer on the substrate, for forming a bottom gate, an NMOS disposed on the barrier layer, and a PMOS disposed on the barrier layer. The NMOS comprises a patterned gate electrode (GE) layer as a top gate, and the patterned GE layer and the bottom gate formed by the one or more patterned a-Si layers form a dual-gate structure. The present invention proposes a low temperature poly-silicon thin-film transistor with a more stabilized I-V characteristic, better driving ability, low power consumption, and higher production yield.