This inventor holds 2 USPTO granted patents. Top assignee: Worldwide Semiconductor Manufacturing Corporation. Active years: 2001.
Company Filing History:
Years Active: 2001
Title: Chang-Da Yang: Innovator in Semiconductor Technology
Introduction
Chang-Da Yang is a prominent inventor based in Changhua, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His innovative work focuses on improving the efficiency and reliability of electronic devices.
Latest Patents
Chang-Da Yang's latest patents include a novel damascene local interconnect process. This invention aims to avoid junction leakage caused by poor interface of the interconnection with isolation edges. The process involves several steps, including forming a dielectric layer over the substrate surface and creating interconnections that span over active areas. Another notable patent is a method of forming an ESD protective transistor through ion implantation. This method enhances the current tolerance and punchthrough ability of the transistor, showcasing his expertise in semiconductor design.
Career Highlights
Chang-Da Yang is currently employed at Worldwide Semiconductor Manufacturing Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing advanced technologies that are crucial for modern electronics.
Collaborations
Throughout his career, Chang-Da Yang has collaborated with talented individuals such as Hsin-Li Cheng and Ping-Wei Wang. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Chang-Da Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of more efficient electronic devices.