Chang Bum Kim

Title: Chang Bum Kim: Innovator in Silicon Technology

Introduction

Chang Bum Kim is a notable inventor based in St. Louis, MO (US). He has made significant contributions to the field of silicon technology, holding a total of 2 patents. His work focuses on improving the quality and properties of silicon ingots, which are essential in various electronic applications.

Latest Patents

One of his latest patents is titled "Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults." This invention relates to a process for preparing a single crystal silicon ingot. The process involves controlling the growth velocity, average axial temperature gradient, and cooling rate of the crystal from solidification to about 750°C. This careful control allows for the formation of a segment with specific intrinsic point defects, ultimately leading to a silicon ingot that minimizes defects and enhances performance.

Career Highlights

Chang Bum Kim is associated with Memc Electronic Materials, Inc., where he applies his expertise in silicon technology. His innovative approaches have contributed to advancements in the production of high-quality silicon materials.

Collaborations

He has collaborated with notable coworkers such as Steven Lawrence Kimbel and Jeffrey Louis Libbert, further enhancing the research and development efforts in his field.

Conclusion

Chang Bum Kim's contributions to silicon technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in electronic materials.