Cedric Maufront

Title: Cedric Maufront: Innovator in Magnetoresistive Memory Technology

Introduction

Cedric Maufront is a notable inventor based in Grenoble, France. He has made significant contributions to the field of magnetoresistive memory technology, particularly with his innovative patent related to MRAM elements. His work has implications for the future of data storage and memory devices.

Latest Patents

Cedric Maufront holds a patent for a magnetoresistive memory element that includes a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region consists of a stacking of at least two antiferromagnetically-coupled ferromagnetic layers. Each layer is associated with a magnetic moment vector, and the resulting magnetic moment vector has an amplitude smaller than at least 40% of the maximum amplitude of the layer magnetic moment vector. The anisotropy field and/or the demagnetizing field tensor is not identical for the ferromagnetic layers, allowing for different angular deviations of the layer magnetic moment vectors when an external magnetic field is applied. This design enables at least two methods for directly writing into the memory element, as well as its initialization.

Career Highlights

Throughout his career, Cedric Maufront has worked with prominent organizations such as STMicroelectronics and the Centre National de la Recherche Scientifique. His experience in these institutions has allowed him to develop and refine his expertise in memory technologies.

Collaborations

Cedric has collaborated with notable colleagues, including Joo-Von Kim and Thibaut Devolder. These partnerships have contributed to the advancement of his research and innovations in the field.

Conclusion

Cedric Maufront's contributions to magnetoresistive memory technology highlight his role as an influential inventor in the field. His innovative patent and collaborations with esteemed colleagues underscore the importance of his work in advancing data storage solutions.