Chapel Hill, CT, United States of America

Caroline Reilly

This inventor holds 1 USPTO granted patent. Top assignee: Raytheon Technologies Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Caroline Reilly. Retrieved from https://idiyas.com/inventor/caroline-reilly-hvw10udl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Caroline Reilly and a Semiconductor Invention.

Introduction

Caroline Reilly is an inventor associated with Chapel Hill, Connecticut, and Raytheon Technologies Corporation. Her listed patent focuses on semiconductor device design and thermal conductivity.

Latest Patents

Reilly is credited with 1 patent: “Segmented transistor active region for enhanced thermal conductivity.” The patent describes a semiconductor device built on a miscut substrate, with epitaxially grown intermediate layers whose upper surface contains steps. Segmented active regions include nanowire channels grown on corresponding steps, and a cap layer is grown over the channels and exposed surface areas. The design uses this segmented structure to enhance thermal conductivity.

Career Highlights

The available information identifies Reilly’s work with Raytheon Technologies Corporation and documents her contribution to semiconductor technology through the patent. The invention addresses the structure of transistor active regions and the management of heat in semiconductor devices.

Collaborations

The patent information provided associates Reilly’s invention with Raytheon Technologies Corporation. No additional collaborators are specified in the available details.

Conclusion

Caroline Reilly’s documented patent presents a nanowire-based, segmented transistor structure intended to improve thermal conductivity, reflecting her contribution to semiconductor innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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