The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Mar. 29, 2023
Applicant:
Raytheon Company, Waltham, MA (US);
Inventor:
Caroline Reilly, Chapel Hill, CT (US);
Assignee:
RAYTHEON TECHNOLOGIES CORPORATION, Arlington, VA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/43 (2025.01); H10D 62/85 (2025.01); H10P 14/20 (2026.01); H10W 44/20 (2026.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 62/8503 (2025.01); H10P 14/3216 (2026.01); H10W 44/20 (2026.01); H10D 30/435 (2025.01); H10W 44/226 (2026.01);
Abstract
A semiconductor device is provided and includes a miscut substrate, intermediate layers epitaxially grown on the miscut substrate such that an uppermost surface of the intermediate layers includes surface steps, segmented active regions including nanowire channels, each of which is epitaxially grown on a corresponding one of the surface steps and a cap layer epitaxially grown on the nanowire channels and exposed portions of the uppermost surface.