Carl Emmett Hager, Iv

Title: Carl Emmett Hager, Iv: Innovator in Group III-Nitride Semiconductor Technology

Introduction

Carl Emmett Hager, Iv is a notable inventor based in Dunkirk, MD (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of Group III-nitride semiconductor devices. His innovative methods have the potential to enhance the performance and reliability of these devices.

Latest Patents

Hager holds a patent for a method using a multiple layer annealing cap for fabricating Group III-nitride semiconductor device structures. This patent, titled "Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby," describes a technique to prevent the escape of nitrogen during the activation of ion implanted dopants. The method involves depositing a first layer of another Group III-nitride as an adhesion layer, followed by a second layer that serves as a mechanical support. These layers form an annealing cap that protects the nitrogen component during the annealing process, which occurs at temperatures ranging from approximately 1100-1250°C. After the annealing, the first and second layers are removed from the Group III-nitride semiconductor.

Career Highlights

Carl Emmett Hager, Iv works for the US Government as represented by the Secretary of the Army. His role involves advancing semiconductor technologies that are crucial for various applications in defense and technology sectors. Hager's expertise in semiconductor fabrication has positioned him as a valuable asset in his field.

Collaborations

Hager has collaborated with notable colleagues, including Michael Andrew Derenge and Kenneth A. Jones. These collaborations have likely contributed to the development and refinement of his innovative semiconductor methods.

Conclusion

Carl Emmett Hager, Iv is a distinguished inventor whose work in Group III-nitride semiconductor technology showcases his commitment to advancing the field. His patented methods have the potential to significantly impact semiconductor device fabrication, making him a key figure in this area of innovation.