US Government As Represented by the Secretary of the Army

Carl Emmett Hager, Iv

Kenneth A Jones

Michael Andrew Derenge

A method of preventing the escape of nitrogen during the activation of ion implanted dopants in a Group III-nitride semiconductor compound without damaging the Group III-nitride semiconductor comprising: depositing a first layer of another Group III-nitride that acts as an adhesion layer; depositing a second layer of a Group III-nitride that acts as a mechanical supporting layer; said first and second layers forming an annealing cap to prevent the escape of the nitrogen component of the Group III-nitride semiconductor; annealing the Group III-nitride semiconductor at a temperature in the range of approximately 1100-1250&#xb0; C.; and removing the first and second layers from the Group III-nitride semiconductor.

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Dunkirk, MD, United States of America

Carl Emmett Hager, Iv