Hwaseong-si, South Korea

Byungjoo Go

USPTO Granted Patents = 3 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2016-2025

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3 patents (USPTO):Explore Patents

Title: Byungjoo Go: Innovator in Semiconductor Technology

Introduction

Byungjoo Go is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to data storage systems and semiconductor devices.

Latest Patents

His latest patents include a semiconductor device featuring support and barrier patterns in connection regions. This semiconductor device comprises a stack structure with interlayer insulating layers and horizontal layers on a lower structure. It also includes a memory vertical structure that penetrates the stack structure, along with first and second barrier structures and a supporter pattern. The first barrier structure consists of first and second barrier patterns arranged in a linear shape, which are spaced apart in a specific direction. Additionally, he has developed a vertical type memory device that involves a method of fabricating a semiconductor device, which includes forming memory cell strings and coupling interconnections and bitlines.

Career Highlights

Byungjoo Go is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work focuses on advancing semiconductor technologies that are crucial for modern electronic devices.

Collaborations

He collaborates with notable colleagues, including Kwang Soo Seol and Seong Soon Cho, who contribute to his innovative projects and research.

Conclusion

Byungjoo Go's contributions to semiconductor technology reflect his expertise and commitment to innovation. His patents are a testament to his role in shaping the future of data storage systems and semiconductor devices.

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