Samsung Electronics Co., Ltd.

Byungjoo Go

Hyunju Sung

Heesung Kam

Kwang Soo Seol

Seong Soon Cho

Hongsoo Kim

Sujin Park

A semiconductor device includes a stack structure including interlayer insulating layers and horizontal layers on a lower structure; a memory vertical structure vertically penetrating the stack structure; first and second barrier structures penetrating the stack structure in parallel; a supporter pattern penetrating the stack structure; and through contact plugs penetrating the stack structure. The first barrier structure includes first barrier patterns arranged in a first direction and spaced apart from each other, and second barrier patterns arranged in the first direction and spaced apart from each other. Each of the first and second barrier patterns includes a linear shape extending in the first direction. In a first barrier pattern and a second barrier pattern adjacent to each other, a portion of the first barrier pattern opposes a portion of the second barrier pattern in a second direction perpendicular to the first direction.

Semiconductor device with vertical patterns and data storage system including the same

Semiconductor device, with support and barrier patterns in connection regions, and data storage system including the same

A method of fabricating a semiconductor device, comprising: forming a plurality of memory cell strings; coupling an interconnection to at least two of the memory cell strings; and coupling a bitline to the interconnection. The interconnection includes a body extending along a first direction and a protrusion protruding from the body along a second direction.

Vertical type memory device

Growing community of inventors

Hwaseong-si, South Korea

Byungjoo Go