DaeJeon, South Korea

Byung-Jun Ahn

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: Electronics and Telecommunications Research Institute. Active years: 2009-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung-Jun Ahn. Retrieved from https://idiyas.com/inventor/byung-jun-ahn-97orxm5i

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 16(Granted Patents)


Location History:

  • Daejeon, KR (2009)
  • Daejon, KR (2011)
  • Daejeon-si, KR (2014)

Company Filing History:


Years Active: 2009-2014

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4 patents (USPTO):Explore Patents

Title: Inventor Byung-Jun Ahn

Introduction: Byung-Jun Ahn is a renowned inventor based in Daejeon-si, South Korea, known for his groundbreaking contributions to various technological fields.

Latest Patents: Byung-Jun Ahn holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Byung-Jun Ahn has worked with leading research institutions and universities, spearheading projects that have led to significant advancements in the field of technology. His dedication to pushing the boundaries of innovation has earned him recognition globally.

Collaborations: Byung-Jun Ahn has collaborated with top companies in the tech industry, fostering partnerships that have resulted in the development of cutting-edge products and solutions. His ability to work seamlessly in multidisciplinary teams has been instrumental in his success as an inventor.

Conclusion: Byung-Jun Ahn's passion for innovation, coupled with his expertise in various technological domains, continues to inspire the next generation of inventors. His impact on the world of technology is profound, and his legacy is sure to endure for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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