Gyunggi-do, South Korea

Byung Ik Song

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electro-Mechanics Co., Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung Ik Song. Retrieved from https://idiyas.com/inventor/byung-ik-song

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Byung Ik Song and Thin-Film Capacitor Innovation.

Introduction

Byung Ik Song is an inventor associated with Samsung Electro-Mechanics Co., Ltd. in Gyunggi-do, South Korea. His work includes a patented thin-film capacitor design intended to improve leakage-current characteristics.

Latest Patents

Song is credited with 1 patent: “Thin Film Capacitor, Thin Film Capacitor-Embedded Printed Circuit Board and Manufacturing Method of Thin Film Capacitor.” The invention describes a capacitor with a dielectric layer made from a BiZnNb-based amorphous metal oxide containing metallic-phase bismuth. By adjusting the bismuth content, the dielectric constant can be tailored without high-temperature heat treatment. The patent also describes using dielectric layers with different bismuth contents and integrating the capacitor into a printed circuit board.

Career Highlights

Song’s patent work addresses the design and manufacture of thin-film capacitors, with a focus on dielectric properties and leakage-current performance. His listed company affiliation is Samsung Electro-Mechanics Co., Ltd.

Collaborations

The provided information lists Seung Eun Lee and Jung Won Lee as Song’s coworkers. Their specific roles in the patented invention are not stated.

Conclusion

Byung Ik Song’s documented contribution is a thin-film capacitor technology that uses a composition-adjustable BiZnNb-based amorphous oxide dielectric to support tailored electrical properties and improved leakage-current characteristics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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