The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Mar. 26, 2008
Seung Eun Lee, Gyunggi-do, KR;
Yul Kyo Chung, Gyunggi-do, KR;
Jung Won Lee, Seoul, KR;
IN Hyung Lee, Seoul, KR;
Byung Ik Song, Gyunggi-do, KR;
Seung Eun Lee, Gyunggi-do, KR;
Yul Kyo Chung, Gyunggi-do, KR;
Jung Won Lee, Seoul, KR;
In Hyung Lee, Seoul, KR;
Byung Ik Song, Gyunggi-do, KR;
Samsung Electro-Mechanics Co. Ltd., Gyunggi-do, KR;
Abstract
There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile