Byung-Hyuk Min

Title: The Innovations of Byung-Hyuk Min: A Pioneer in Transistor Technology

Introduction: Byung-Hyuk Min is a renowned inventor based in Seoul, South Korea, recognized for his significant contributions to the field of semiconductor technology. With a portfolio of nine patents, Min has made notable advancements in the design and operation of field effect transistors, elucidating his expertise in innovation.

Latest Patents: Among his latest patents, Byung-Hyuk Min is credited for inventions focused on multiple floating gate field effect transistors and methods of operating them. These transistors are designed to enhance performance through an architecture that includes laterally spaced apart source and drain regions, undoped regions, and a doped channel region. The design integrates a main gate and sub gates, which are electrically insulated, allowing for improved functionality and efficiency in transistor operation. Another significant patent describes a method for fabricating a MOS transistor with an offset resistance. This innovation allows for controlled channel behavior through a strategically designed gate electrode that reduces leakage current, showcasing Min's commitment to enhancing transistor reliability.

Career Highlights: Byung-Hyuk Min works at Samsung Electronics Co., Ltd., a leader in semiconductor technology and innovation. His role within this prestigious organization has allowed him to advance research in cutting-edge technologies, contributing to the company’s leading position in the market. His patents exemplify his deep understanding of semiconductor physics and engineering principles, positioning him as a key figure in his field.

Collaborations: Throughout his career, Min has collaborated with talented professionals such as Min-Koo Han and Cheol-min Park. These partnerships have fostered a creative environment that promotes the exchange of ideas and expertise, leading to groundbreaking inventions in transistor technology.

Conclusion: Byung-Hyuk Min stands out as a visionary inventor whose work in multiple floating gate field effect transistors and MOS transistors contributes significantly to the advancement of semiconductor technologies. His patents not only enhance device performance but also pave the way for future innovations in the electronics industry, ensuring his legacy as a pioneering innovator in the field.