Seoul, South Korea

Byung Hei Jun

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung Hei Jun. Retrieved from https://idiyas.com/inventor/byung-hei-jun-aqd1x3ij

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2017

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2 patents (USPTO):Explore Patents

Title: Byung Hei Jun: Innovator in Memory Technology

Introduction

Byung Hei Jun is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of memory systems.

Latest Patents

Byung Hei Jun's latest patents include a system and method involving a three-dimensional nonvolatile memory device and random access memory. This innovative program method is designed for a memory system that incorporates multi-level memory cells. The method utilizes random access memory to store selected bits of multi-bit data during the programming of a row of memory cells in the three-dimensional nonvolatile memory.

Career Highlights

Byung Hei Jun is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role at Samsung allows him to work on cutting-edge memory technologies that are crucial for modern computing.

Collaborations

One of his notable coworkers is Donghun Kwak, with whom he collaborates on various projects related to memory technology.

Conclusion

Byung Hei Jun's contributions to memory technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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