The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Jun. 30, 2015
Applicants:
Byung Hei Jun, Seoul, KR;
Donghun Kwak, Hwaseong-si, KR;
Inventors:
Byung Hei Jun, Seoul, KR;
Donghun Kwak, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/02 (2006.01); G06F 3/06 (2006.01); G11C 16/10 (2006.01); G11C 7/10 (2006.01); G11C 16/06 (2006.01); G11C 16/34 (2006.01); G06F 12/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0605 (2013.01); G06F 3/061 (2013.01); G06F 3/064 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 12/0246 (2013.01); G06F 12/0292 (2013.01); G06F 12/0638 (2013.01); G11C 7/10 (2013.01); G11C 16/06 (2013.01); G11C 16/10 (2013.01); G11C 16/3454 (2013.01); G06F 2212/1016 (2013.01); G06F 2212/1041 (2013.01); G06F 2212/205 (2013.01);
Abstract
A program method for a memory system including a three-dimensional nonvolatile memory having multi-level memory cells and a random access memory. The method uses the random access memory to variously store selected bits of multi-bit data during the programming of a row of memory cells in the three-dimensional nonvolatile memory.