Byung-Do Yang

Title: Inventor Spotlight: Byung-Do Yang

Introduction

Byung-Do Yang is a prominent inventor based in Cheongju, South Korea, with a significant contribution to the field of semiconductor technology. With five patents to his name, Yang has showcased his expertise in creating innovative solutions that enhance electronic devices and systems.

Latest Patents

Yang's latest patents include two notable inventions:

1. **CMOS Logic Element Including Oxide Semiconductor** - This patent presents a Complementary Metal Oxide Semiconductor (CMOS) logic element comprising a substrate with a PMOS area. The design features a circuit wiring structure that has an insulating layer and a wiring layer alternately stacked, along with an NMOS area spaced apart from the PMOS area. The invention highlights the integration of silicon in the first transistor's channel and an oxide semiconductor in the second transistor's channel, thereby optimizing the performance of CMOS technology.

2. **SRAM Device Including Oxide Semiconductor** - This patent describes a static random-access memory (SRAM) device that also utilizes an oxide semiconductor. The architecture involves a substrate with a PMOS area and a circuit wiring structure that includes multiple NMOS areas. Key features of this innovation include transistors with channels that integrate silicon and oxide semiconductors, demonstrating Yang's commitment to advancing memory technology.

Career Highlights

Throughout his career, Byung-Do Yang has contributed to leading organizations, including the Electronics and Telecommunications Research Institute and the Chungbuk National University Industry-Academic Cooperation Foundation. His work at these institutions has greatly influenced the development of innovative semiconductor technologies, earning him recognition in the field.

Collaborations

Yang has partnered with notable colleagues, including Sung Haeng Cho and Sooji Nam. These collaborations have enriched his research, fostering a collaborative environment to push the boundaries of semiconductor innovation and technology.

Conclusion

Byung-Do Yang stands out as a dedicated inventor whose contributions have significantly impacted the semiconductor industry. With a total of five patents, his recent developments in CMOS logic elements and SRAM devices reflect a profound understanding of electronic systems. Yang's career and collaborative efforts further exemplify the spirit of innovation that drives technological advancement in the modern era.