Electronics and Telecommunications Research Institute

Cungbuk Nat'l Univ. Industry Academic Cooperation Foundation

Byung-Do Yang

Jaehyun Moon

Jae-Eun Pi

Sung Haeng Cho

Sooji Nam

Jae-Min Kim

Hyun Kyu Yu

Young Sam Park

Mun Yang Park

Seon-Ho Han

Nam Yeal Lee

Seung-Yun Lee

Byoung-Gon Yu

Young-Jun Kim

Seong-Do Kim

Sung-Min Yoon

Jae-Mun Oh

Yong-Sik Youn

Jung-Ho Kim

Ki-Hyuk Sung

Lee-Sup Kim

Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.

CMOS logic element including oxide semiconductor

Provided is a static random-access memory (SRAM) device. The SRAM device includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes a first NMOS area and a second NMOS area vertically separated from the PMOS area with the first NMOS area therebetween, a first transistor including a first gate electrode disposed on the PMOS area, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, a second transistor including a second gate electrode disposed in the first NMOS area and a second channel vertically overlapping the second gate electrode, and a third transistor including a third gate electrode disposed in the second NMOS area and a third channel vertically overlapping the third gate electrode, wherein the first channel includes silicon, wherein the second channel and the third channel include an oxide semiconductor.

SRAM device including oxide semiconductor

Disclosed herein is a memory-type camouflaged logic gate using transistors having different threshold voltages. The camouflaged logic gate may include two or more candidate logic gates, memory, the output signal of which is adjusted based on two or more transistors having different threshold voltages, and a multiplexer for selectively outputting the output of one of the two or more candidate logic gates depending on the output signal of the memory.

Memory-type camouflaged logic gate using transistors with different threshold voltages

Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time. According to the present invention, since the PRAM consumes different amounts of power when writing data with a value of 0 and data with a value of 1, the power consumed when input original data is stored and the power consumed when the input original data is inverted and stored are compared to each other, the data with a smaller power consumption is stored when the data is written to the PRAM as a word unit, and thus the power consumption of the PRAM can be reduced.

Apparatus and method for writing data to phase-change memory by using power calculation and data inversion

The present invention relates to a ROM division method for reducing the size of a ROM in a direct digital frequency synthesizer (DDFS), which is used to synthesize a frequency in a communication system requiring fast frequency conversion. A ROM consuming most energy in the system, a modified Nicholas architecture is brought forth to reduce the size of ROM. In this modified Nicholas architecture, a ROM is divided into coarse ROM and fine ROM to convert phase to sine value. The present invention divides the coarse ROM and the fine ROM into quantized ROM and error ROM respectively. Then, value stored in each ROM is segmented in certain intervals and the minimum quantized value in each of the section is stored in the quantized ROM, while the difference between the original ROM value and the quantized ROM value is stored in the error ROM. This way, the size of a ROM can be reduced. Phase value inputted in a DDFS, a sine value is calculated by adding the four ROM values, i.e., coarse-quantized ROM, coarse-error ROM, fine-quantized ROM and fine-error ROM.

Method for dividing ROM and DDFS using the same method

Growing community of inventors

Cheongju, South Korea

Byung-Do Yang