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For the Inventor, By the Inventor

Daejeon, South Korea

Byoung-Gon Yu

USPTO Granted Patents = 10

Average Co-Inventor Count = 6.1

ph-index = 3

Forward Citations = 44(Granted Patents)


Location History:

  • Taejon, KR (2000 - 2002)
  • Daejon, KR (2004 - 2008)
  • Daejeon, KR (2006 - 2014)

Company Filing History:

goldMedal10 out of 11,315 
 
Electronics and Telecommunications Research Institute
 patents
silverMedal1 out of 1 
 
Cungbuk Nat'l Univ. Industry Academic Cooperation Foundation
 patent
where one patent can have more than one assignee

Years Active: 2000-2014

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10 patents (USPTO):Explore Patents
1. 8872146 - Phase-change random access memory device and method of manufacturing the same (2014-10-28),
2. 8071396 - Embedded phase-change memory and method of fabricating the same (2011-12-06),
3. 7920413 - Apparatus and method for writing data to phase-change memory by using power calculation and data inversion (2011-04-05),
4. 7855421 - Embedded phase-change memory and method of fabricating the same (2010-12-21),
5. 7767994 - Phase-change random access memory device and method of manufacturing the same (2010-08-03),
6. 7391393 - Low power and high density source driver and current driven active matrix organic electroluminescent device having the same (2008-06-24),
7. 7133954 - Data bus system for micro controller (2006-11-07),
8. 6759714 - Semiconductor device having heat release structure using SOI substrate and fabrication method thereof (2004-07-06),
9. 6486047 - Apparatus for forming strontium-tantalum-oxide thin film (2002-11-26),
10. 6147896 - Nonvolatile ferroelectric memory using selective reference cell (2000-11-14),

Title: Byoung-Gon Yu: Innovator in Phase-Change Memory Technology

Introduction

Byoung-Gon Yu is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of memory technology, particularly in phase-change random access memory (PRAM) devices. With a total of 10 patents to his name, Yu's work has advanced the capabilities and reliability of memory devices.

Latest Patents

One of his latest patents is titled "Phase-change random access memory device and method of manufacturing the same." This invention provides a PRAM device that includes a heating layer composed of first and second heating layers with different physical properties. The optimal heating characteristics of this layer enhance the reliability and operating performance of the PRAM device. Another notable patent is "Embedded phase-change memory and method of fabricating the same." This invention focuses on an embedded memory essential for high-performance, multifunction system-on-chip (SOC) applications. It integrates a bipolar transistor, a phase-change memory device, and a MOS transistor on a substrate, showcasing innovative design and functionality.

Career Highlights

Throughout his career, Byoung-Gon Yu has worked with esteemed organizations such as the Electronics and Telecommunications Research Institute and the Chungbuk National University Industry-Academic Cooperation Foundation. His experience in these institutions has allowed him to collaborate on cutting-edge research and development projects.

Collaborations

Yu has collaborated with notable colleagues, including Seung-Yun Lee and Young Sam Park. Their joint efforts have contributed to advancements in memory technology and have fostered innovation in the field.

Conclusion

Byoung-Gon Yu's contributions to phase-change memory technology have established him as a key figure in the industry. His innovative patents and collaborations reflect his commitment to advancing memory device technology.

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