The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Jun. 23, 2010
Seung-yun Lee, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Kyu-jeong Choi, Daejeon, KR;
Nam-yeal Lee, Daejeon, KR;
Byoung-gon Yu, Daejeon, KR;
Seung-Yun Lee, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Kyu-Jeong Choi, Daejeon, KR;
Nam-Yeal Lee, Daejeon, KR;
Byoung-Gon Yu, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.