The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Dec. 04, 2006
Seung-yun Lee, Daejeon, KR;
Sangouk Ryu, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Kyu-jeong Choi, Daejeon, KR;
Nam-yeal Lee, Daejeon, KR;
Byoung-gon Yu, Daejeon, KR;
Seung-Yun Lee, Daejeon, KR;
Sangouk Ryu, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Kyu-Jeong Choi, Daejeon, KR;
Nam-Yeal Lee, Daejeon, KR;
Byoung-Gon Yu, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.