Byoung Chan Oh

Title: Byoung Chan Oh: Innovator in Resistance Change Memory Technology

Introduction

Byoung Chan Oh is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory technology, particularly in resistance change memory systems. With a total of four patents to his name, his work has garnered attention in the tech industry.

Latest Patents

Oh's latest patents focus on advancements in resistance change memory. One embodiment describes a memory that includes a memory cell array with blocks arranged in a column direction. It features first and second main global conductive lines extending from one end to the other of the memory cell array. A first resistance change element is connected between these conductive lines within the array, while a second resistance change element is connected to a reference global conductive line outside the memory cell array. Another patent outlines a resistance change memory that includes a memory cell, a sense amplifier, and a global bit line. The memory cell is strategically located where a local bit line and a word line intersect, allowing the sense amplifier to read data by supplying a read current to the memory cell.

Career Highlights

Throughout his career, Byoung Chan Oh has worked with notable companies such as SK Hynix Inc. and Kabushiki Kaisha Toshiba. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Oh has collaborated with esteemed colleagues, including Masahiro Takahashi and Akira Katayama. These partnerships have likely enhanced his research and development efforts in the field.

Conclusion

Byoung Chan Oh is a key figure in the development of resistance change memory technology. His innovative patents and collaborations reflect his commitment to advancing memory systems. His contributions continue to influence the tech industry and pave the way for future innovations.