The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Mar. 03, 2015
Masahiro Takahashi, Seongnam-si, KR;
Akira Katayama, Seoul, KR;
Dong Keun Kim, Icheon-si, KR;
Byoung Chan OH, Seoul, KR;
Masahiro Takahashi, Seongnam-si, KR;
Akira Katayama, Seoul, KR;
Dong Keun Kim, Icheon-si, KR;
Byoung Chan Oh, Seoul, KR;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
SK HYNIX INC., Icheon-Si, Gyeonggi-Do, KR;
Abstract
According to one embodiment, a resistance change memory includes a memory cell, a sense amplifier and a global bit line. The memory cell is disposed at a location where a local bit line and a word line intersect each other. The memory cell is connected to both the local bit line and the word line. The sense amplifier reads data stored on the memory cell by supplying a read current to the memory cell. The global bit line is connected between the local bit line and the sense amplifier. The global bit line feeds the read current supplied by the sense amplifier to the local bit line. The sense amplifier charges the global bit line, before the local bit line and the global bit line are connected to each other.