The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Sep. 04, 2013
Applicants:

Akira Katayama, Seoul, KR;

Masahiro Takahashi, Seongnam-si, KR;

Tsuneo Inaba, Seongnam-si, KR;

Hyuck Sang Yim, Seoul, KR;

Dong Keun Kim, Icheon-si, KR;

Byoung Chan OH, Seoul, KR;

Ji Wang Lee, Icheon-si, KR;

Inventors:

Akira Katayama, Seoul, KR;

Masahiro Takahashi, Seongnam-si, KR;

Tsuneo Inaba, Seongnam-si, KR;

Hyuck Sang Yim, Seoul, KR;

Dong Keun Kim, Icheon-si, KR;

Byoung Chan Oh, Seoul, KR;

Ji Wang Lee, Icheon-si, KR;

Assignees:

SK HYNIX INC., Icheon-Si, Gyeonggi-Do, KR;

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/16 (2013.01); G11C 11/1673 (2013.01); G11C 5/06 (2013.01); G11C 2013/0054 (2013.01);
Abstract

According to one embodiment, a memory includes a memory cell array including blocks arranged in a column direction, first and second main global conductive lines each extending from a first end to a second end of the memory cell array in the column direction, a first resistance change element connected between the first and second main global conductive lines inside the memory cell array, a first reference global conductive line extending from the first end to the second end of the memory cell array in the column direction, and a second resistance change element connected to the reference global conductive line outside the memory cell array.


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