Byeung Chui Kim

Title: The Innovative Contributions of Byeung Chui Kim

Introduction: Byeung Chui Kim, an accomplished inventor based in Boise, ID, has made significant strides in the field of integrated assemblies with her groundbreaking patent. As part of her work at Micron Technology Incorporated, Kim's focus on innovative memory technologies showcases her vital role in advancing electronic components.

Latest Patents: Kim holds a patent for "Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies." This patent describes a memory array that features a vertical stack of alternating insulative levels and wordline levels. The design includes conductive terminal ends within control gate regions that are vertically spaced by insulative materials, optimizing the performance of memory storage through innovative charge-trapping segments.

Career Highlights: Throughout her career, Kim has demonstrated exceptional creativity and technical expertise. Her patent exemplifies her capability to explore and refine complex memory technologies, contributing to the enhancement of data storage and retrieval systems in modern electronics.

Collaborations: Byeung Chui Kim's work is complemented by her collaborations with esteemed colleagues, such as Francois H. Fabreguette and Richard J. Hill. Their combined efforts in research and development contribute to the enhancement of memory technology, further solidifying Kim's reputation as a pivotal innovator in her field.

Conclusion: Byeung Chui Kim's contributions through her innovative patent illustrate her dedication to advancing technology. Her work at Micron Technology Incorporated not only highlights her skills as an inventor but also emphasizes the importance of collaboration in driving innovation within the tech industry. As she continues to push the boundaries of integrated assemblies, Kim remains a significant figure within the realm of electronic advancements.