Suwon, South Korea

Byeonghee Son

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byeonghee Son. Retrieved from https://idiyas.com/inventor/byeonghee-son

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Byeonghee Son - Innovator in Semiconductor Technology

Introduction: Byeonghee Son is an inventor based in Suwon-si, South Korea. He is known for his contributions to the field of semiconductor devices. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications: Byeonghee Son has filed several notable patent applications. One of his applications is for a semiconductor device and method of fabricating the same. This device includes a substrate with an active pattern, a channel pattern featuring multiple semiconductor patterns, and a source/drain pattern connected to these semiconductor patterns. Additionally, it incorporates a gate electrode and a blocking layer made of silicon-germanium (SiGe), with a higher germanium concentration than that of the source/drain pattern. Another application details a semiconductor device that features an active region, a nanosheet stack, and multiple gate structures with source/drain regions arranged on their sidewalls. This design aims to enhance the performance and efficiency of semiconductor devices.

Conclusion: Byeonghee Son is an emerging inventor in the semiconductor field, with innovative patent applications that showcase his expertise and vision for future technologies. His work has the potential to contribute significantly to advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…