Seongnam, South Korea

Bumsoo Kim

This inventor holds 1 USPTO granted patent. Top assignee: Ocz Storage Solutions Inc.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bumsoo Kim. Retrieved from https://idiyas.com/inventor/bumsoo-kim-j0bqrokl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Bumsoo Kim: Innovator in Flash Memory Technology

Introduction

Bumsoo Kim is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of flash memory technology. His innovative work has led to the development of a unique patent that addresses critical issues in memory device performance.

Latest Patents

Bumsoo Kim holds 1 patent for a flash memory device and programming method that equalizes wear-level. This invention includes a memory cell array and an inversion determining unit that generates a programming page by inverting or not inverting a data page based on the number of '1's and '0's present. The programming unit stores the generated programming page in the memory cell array, while the data verifying unit reads the stored programming page to restore the data page, ensuring that the wear-level of the memory cell is equalized.

Career Highlights

Bumsoo Kim is currently employed at Ocz Storage Solutions Inc., where he continues to advance his research and development efforts in flash memory technology. His work has been instrumental in enhancing the reliability and efficiency of memory devices.

Collaborations

Bumsoo has collaborated with notable colleagues, including Hyunmo Chung and Hanmook Park, who share his passion for innovation in technology.

Conclusion

Bumsoo Kim's contributions to flash memory technology exemplify the impact of innovative thinking in the tech industry. His patent reflects a commitment to improving memory device performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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