The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2014

Filed:

Aug. 25, 2008
Applicants:

Bumsoo Kim, Seongnam-si, KR;

Hyunmo Chung, Seongnam-si, KR;

Hanmook Park, Seongnam-si, KR;

Inventors:

Bumsoo Kim, Seongnam-si, KR;

Hyunmo Chung, Seongnam-si, KR;

Hanmook Park, Seongnam-si, KR;

Assignee:

OCZ Storage Solutions Inc., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); H03M 13/00 (2006.01); G11C 11/34 (2006.01); G11C 5/14 (2006.01); G06F 13/00 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 29/36 (2006.01); G11C 13/00 (2006.01); G06F 3/06 (2006.01); G06F 11/00 (2006.01); G06F 11/07 (2006.01); G06F 11/08 (2006.01); G06F 12/02 (2006.01); G06F 17/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3495 (2013.01); G11C 16/10 (2013.01); G11C 16/3436 (2013.01); G11C 16/344 (2013.01); G11C 16/349 (2013.01); G11C 11/5628 (2013.01); G11C 2211/5647 (2013.01); G11C 29/36 (2013.01); G11C 13/0035 (2013.01); G06F 3/0679 (2013.01); G06F 11/00 (2013.01); G06F 11/0727 (2013.01); G06F 11/08 (2013.01); G06F 12/0246 (2013.01); G06F 17/30218 (2013.01);
Abstract

Disclosed are a flash memory device and flash memory programming method that equalizes a wear-level. The flash memory device includes a memory cell array, an inversion determining unit to generate a programming page through inverting or not inverting a data page based on a number of '1's and '0's in the data page, a programming unit to store the generated programming page in the memory cell array; and a data verifying unit to read the programming page stored in the memory cell array, to restore the data page from the programming page according to whether an error exists in the read programming page, and to output the restored data page, and thereby can equalize a wear-level of a memory cell.


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