This inventor holds 1 USPTO granted patent. Top assignee: Pohang University of Science and Technology Foundation. Active years: 2015.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2015
Title: Bumjoo Kim and Ionic Nanochannel Transistor Innovation.
Introduction
Bumjoo Kim is an inventor associated with Pohang University of Science and Technology Foundation in Pohang, South Korea. His listed patent concerns an ionic field effect transistor that uses a heterogeneous triangular nanochannel.
Latest Patents
Kim is credited with 1 patent: “Ionic Field Effect Transistor Having Heterogeneous Triangular Nanochannel and Method of Manufacturing the Same.” The invention describes a substrate and a polymer layer containing two separate flow paths. A gate electrode lies between the substrate and polymer layer and contacts both flow paths. Between the gate electrode and polymer layer, a heterogeneous triangular nanochannel connects the two paths.
Career Highlights
The available information identifies Kim’s work with Pohang University of Science and Technology Foundation. His patent focuses on transistor structure and nanochannel design.
Collaborations
Kim’s listed coworkers include Geunbae Lim and Sung Jae Kim.
Conclusion
Bumjoo Kim’s patent documents an ionic field effect transistor innovation built around a triangular nanochannel connecting separate flow paths.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile