The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Feb. 17, 2014
Postech Academy-industry Foundation, Pohang-si, KR;
Geunbae Lim, Pohang-si, KR;
Sung Jae Kim, Seoul, KR;
Bumjoo Kim, Pohang-si, KR;
Joonseong Heo, Pohang-si, KR;
Hyukjin J. Kwon, Yongin-si, KR;
Postech Academy-Industry Foundation, Pohang-Si, KR;
Abstract
An ionic field effect transistor includes: a substrate; a polymer layer that is formed on the substrate and in which a first flow path and a second flow path that is separately disposed from the first flow path are formed; and a gate electrode that is formed between the substrate and the polymer layer and that contacts the first flow path and the second flow path, wherein a heterogeneous triangular nanochannel that connects the first flow path and the second flow path is formed between the gate electrode and the polymer layer.