Company Filing History:
Years Active: 1993-1998
Title: Innovations of Bryan N Rhoads
Introduction
Bryan N Rhoads is a notable inventor based in Pine Bush, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on etching compositions and methods for forming patterned films on substrates.
Latest Patents
One of his latest patents is titled "Etching composition and use thereof." This patent describes an aqueous etchant composition that effectively removes polymer residue from substrates, particularly integrated circuit chips with aluminum lines. The composition contains a specific range of sulfuric acid and hydrogen peroxide, or ozone, to achieve optimal results. Another significant patent is "Method for forming patterned films on a substrate." This invention outlines a detailed process for creating patterned films on semiconductor substrates, involving multiple layers and specific materials to ensure high-quality results.
Career Highlights
Bryan N Rhoads is currently associated with International Business Machines Corporation (IBM), where he continues to innovate and contribute to advancements in technology. His expertise in etching and film formation has positioned him as a valuable asset in the semiconductor industry.
Collaborations
Throughout his career, Bryan has collaborated with several talented individuals, including Margaret Jane Lawson and Edward J Leonard. These collaborations have further enhanced his work and contributed to the success of his inventions.
Conclusion
Bryan N Rhoads is a distinguished inventor whose work in semiconductor technology has led to valuable patents and innovations. His contributions continue to impact the industry positively, showcasing the importance of research and development in advancing technology.