The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 1993

Filed:

Apr. 26, 1991
Applicant:
Inventors:

John A Fitzsimmons, Poughkeepsie, NY (US);

Janos Havas, Hopewell Junction, NY (US);

Margaret J Lawson, Newburgh, NY (US);

Edward J Leonard, Fishkill, NY (US);

Bryan N Rhoads, Pine Bush, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437187 ; 437228 ; 437229 ; 437944 ; 148D / ;
Abstract

A method of forming patterned films on a semiconductor substrate 10 includes the steps of depositing a hardened photo resist underlay 30 onto the substrate, then depositing a polyether sulfone release layer 32, then depositing a photo sensitive resist layer 34 and exposing an etching a metallization pattern 36, 38 to the substrate 10. The structure is then blanket deposited with a conductive layer 40 to thereby create a conductive contact stud 42. The film layer 40 and resist layer 34 are removed by dissolving the polyether sulfone layer 32 in an NMP solution and the photo resist underlayer 30 is then removed using a selective photo resist stripper composition.


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