Brian P Ronan

Title: Innovations of Brian P Ronan

Introduction

Brian P Ronan is a notable inventor based in North Merrick, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of three patents. His work primarily focuses on enhancing the performance and reliability of electronic devices.

Latest Patents

One of his latest patents is for a silicon germanium heterojunction bipolar transistor with carbon incorporation. This invention includes a semiconductor region and a diffusion region within it. The diffusion region is boron-doped, while the semiconductor region contains a carbon dopant to minimize boron diffusion. The combination of the dopant, boron amount, and semiconductor size ensures that the diffusion region maintains a sheet resistance of less than approximately 4 Kohms/cm. The boron-doping concentration ranges from 1×10/cm to 1×10/cm. Additionally, the semiconductor region comprises 5–25% germanium and 0–3% carbon. By incorporating carbon, the device achieves enhanced electrostatic discharge robustness, resulting in a tighter distribution of power-to-failure and increased critical thickness, while reducing thermal strain in the semiconductor region.

Career Highlights

Brian P Ronan is currently employed at International Business Machines Corporation (IBM). His work at IBM has allowed him to push the boundaries of semiconductor technology and contribute to advancements in electronic devices.

Collaborations

He has collaborated with notable colleagues, including Louis DeWolf Lanzerotti and Steven H Voldman. Their combined expertise has further enriched the innovations in their respective fields.

Conclusion

Brian P Ronan's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His work continues to influence advancements in electronic devices and their reliability.