Yongin, South Korea

Bounggun Joung

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Sdi Co., Inc.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bounggun Joung. Retrieved from https://idiyas.com/inventor/bounggun-joung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 18.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Bounggun Joung: Innovator in Battery Technology

Introduction

Bounggun Joung is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of battery technology, particularly in the estimation of battery lifetimes. His work is essential for improving the efficiency and reliability of secondary batteries.

Latest Patents

Joung holds a patent for a "Device for estimating a lifetime of a secondary battery and method thereof." This invention provides an accelerated lifetime estimation device that predicts the lifetime of a secondary battery. The device can accurately estimate the normal lifetime of the battery while significantly reducing the evaluation time period.

Career Highlights

Bounggun Joung is currently employed at Samsung SDI Co., Inc., a leading company in battery manufacturing and technology. His role at Samsung SDI allows him to apply his innovative ideas in a practical setting, contributing to advancements in battery technology.

Collaborations

He has collaborated with notable coworkers, including Seung Bum Suh and Heekwan Chai, who share his passion for innovation in the field of battery technology.

Conclusion

Bounggun Joung's contributions to battery technology through his patent and work at Samsung SDI highlight his role as an important inventor in the industry. His innovative approaches are paving the way for advancements in battery efficiency and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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