Gyeonggi-do, South Korea

Boung-Lyoul Jung

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Boung-Lyoul Jung. Retrieved from https://idiyas.com/inventor/boung-lyoul-jung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Boung-Lyoul Jung: Innovator in Semiconductor Technology

Introduction

Boung-Lyoul Jung is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances the reliability of connections.

Latest Patents

Boung-Lyoul Jung holds a patent for a "Semiconductor device having contact failure detector." This invention features a circuit designed to detect defective connections within semiconductor devices. The device includes multiple internal circuits and pads connected to these circuits. Additionally, it incorporates a contact failure detector that identifies failures between the tips of a probe card and the pads.

Career Highlights

He is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to focus on advancing semiconductor technologies and improving device performance.

Collaborations

Some of his notable coworkers include Gwang-Young Kim and Jong-Youb Kim. Their collaborative efforts contribute to the innovative environment at Samsung Electronics.

Conclusion

Boung-Lyoul Jung's contributions to semiconductor technology exemplify the importance of innovation in the tech industry. His patent for a contact failure detector showcases his commitment to enhancing device reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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