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For the Inventor, By the Inventor

McKinney, TX, United States of America

Borna J Obradovic

USPTO Granted Patents = 12

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 30(Granted Patents)


Company Filing History:

goldMedal12 out of 29,263 
 
Texas Instruments Corporation
 patents

Years Active: 2009-2015

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12 patents (USPTO):Explore Patents
1. 9013167 - Hall effect device having voltage based biasing for temperature compensation (2015-04-21),
2. 8380476 - Modeling of ferroelectric capacitors to include local statistical variations of ferroelectric properties (2013-02-19),
3. 8170858 - Characterization and modeling of ferroelectric capacitors (2012-05-01),
4. 8119470 - Mitigation of gate to contact capacitance in CMOS flow (2012-02-21),
5. 8114729 - Differential poly doping and circuits therefrom (2012-02-14),
6. 7892930 - Method to improve transistor tox using SI recessing with no additional masking steps (2011-02-22),
7. 7812401 - MOS device and process having low resistance silicide interface using additional source/drain implant (2010-10-12),
8. 7727838 - Method to improve transistor Tox using high-angle implants with no additional masks (2010-06-01),
9. 7718482 - CD gate bias reduction and differential N+ poly doping for CMOS circuits (2010-05-18),
10. 7682892 - MOS device and process having low resistance silicide interface using additional source/drain implant (2010-03-23),
11. 7572716 - Semiconductor doping with improved activation (2009-08-11),
12. 7537988 - Differential offset spacer (2009-05-26),

Title: Borna J Obradovic: Innovator in Hall Effect Devices and Ferroelectric Capacitors

Introduction

Borna J Obradovic is a prominent inventor based in McKinney, TX (US). He has made significant contributions to the field of electronic devices, particularly in the development of Hall effect devices and ferroelectric capacitors. With a total of 12 patents to his name, Obradovic continues to push the boundaries of innovation in technology.

Latest Patents

One of his latest patents is a Hall effect device having voltage-based biasing for temperature compensation. This device includes a Hall element and a voltage regulator, which maintains a constant voltage level within the Hall element while generating a Hall effect voltage. This innovation prevents the Hall effect voltage from varying significantly with temperature changes, enhancing the reliability of the device.

Another notable patent involves the modeling of ferroelectric capacitors to include local statistical variations of ferroelectric properties. This simulation includes a model of a multi-domain ferroelectric capacitor, where each domain is associated with specific coercive voltages. The model utilizes a Poisson probability distribution to evaluate the electrical behavior of the ferroelectric capacitor, providing insights into its performance under various conditions.

Career Highlights

Borna J Obradovic is currently employed at Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to collaborate with other talented professionals in the field, contributing to groundbreaking advancements in electronic technology.

Collaborations

Some of his notable coworkers include Shashank Sureshchandra Ekbote and Keith Ryan Green. Their collaborative efforts have further enhanced the innovative projects at Texas Instruments, leading to the development of cutting-edge technologies.

Conclusion

Borna J Obradovic is a distinguished inventor whose work in Hall effect devices and ferroelectric capacitors has made a significant impact in the field of electronics. His contributions continue to inspire future innovations and advancements in technology.

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