The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Jan. 18, 2010
Borna Obradovic, McKinney, TX (US);
Shashank Ekbote, Allen, TX (US);
Mark Visokay, Richardson, TX (US);
Borna Obradovic, McKinney, TX (US);
Shashank Ekbote, Allen, TX (US);
Mark Visokay, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit (IC) includes a semiconductor substrate, a least one MOS transistor formed in or on the substrate, the MOS transistor including a source and drain doped with a first dopant type having a channel region of a second dopant type interposed between, and a gate electrode and a gate insulator over the channel region. A silicide layer forming a low resistance contact is at an interface region at a surface portion of the source and drain. At the interface region a chemical concentration of the first dopant is at least 5×10cm. Silicide interfaces according to the invention provide MOS transistor with a low silicide interface resistance, low pipe density, with an acceptably small impact on short channel behavior.