Flanders, NJ, United States of America

Boris Peres

USPTO Granted Patents = 6 

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 170(Granted Patents)


Location History:

  • Jersey City, NJ (US) (2006)
  • Flanders, NJ (US) (2012 - 2014)

Company Filing History:


Years Active: 2006-2014

Loading Chart...
6 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Boris Peres

Introduction

Boris Peres is a notable inventor based in Flanders, NJ (US), recognized for his significant contributions to the field of semiconductor technology. With a total of 6 patents to his name, he has made strides in the design and functionality of high-power field-effect transistors (FETs). His work has been instrumental in advancing the capabilities of GaN-based devices.

Latest Patents

One of Boris Peres's latest patents is focused on a layout design for a high-power, GaN-based FET featuring interdigitated gate, source, and drain electrodes. This innovative FET design includes a first and second set of finger arrays, each comprising a source, gate, and drain. The design incorporates a first source pad that is electrically coupled to the source electrodes in the first set of finger arrays, and a second source pad for the second set. Additionally, a common drain pad is connected to the drain electrodes in both sets of finger arrays. The layout also features a first gate pad linked to the gate electrodes in the first set and a second gate pad for the second set. A substrate is provided to support these components, showcasing the intricate design and engineering involved in his work.

Career Highlights

Boris has worked with prominent companies in the semiconductor industry, including Power Integrations, Inc. and Velox Semiconductor Corporation. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technologies in power electronics.

Collaborations

Throughout his career, Boris has collaborated with talented individuals such as Milan Pophristic and LinLin Liu. These partnerships have fostered innovation and have been crucial in the development of his patented technologies.

Conclusion

Boris Peres stands out as a significant figure in the realm of semiconductor innovation. His contributions, particularly in the design of high-power GaN-based FETs, reflect his expertise and commitment to advancing technology. His work continues to influence the industry and inspire future innovations.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…