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For the Inventor, By the Inventor

Taipei, Taiwan

Bor-Cheng Chen

This inventor holds 5 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1998-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bor-Cheng Chen. Retrieved from https://idiyas.com/inventor/bor-cheng-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5

% Patents Active = 80.0

Average Co-Inventor Count = 2.5

ph-index = 2

Forward Citations = 21(Granted Patents)


Company Filing History:

goldMedal5 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 1998-2005

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5 patents (USPTO):Explore Patents
1. 6929965 - Early response to plasma/charging damage by special pattern design of active region (2005-08-16),
2. 6593157 - Early response to plasma/charging damage by special pattern design of active region (2003-07-15),
3. 6258706 - Method for fabricating a stress buffered bond pad (2001-07-10),
4. 5942800 - Stress buffered bond pad and method of making (1999-08-24),
5. 5745239 - Multiple focal plane image comparison for defect detection and (1998-04-28),

Title: The Innovative Mind of Bor-Cheng Chen

Introduction

Bor-Cheng Chen, an accomplished inventor based in Taipei, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of five patents to his name, Chen is renowned for his innovative approaches to enhancing the reliability and performance of electronic components.

Latest Patents

Among Chen’s latest innovations is a groundbreaking method for early detection of plasma damage to gate oxide layers through a specially designed active region. This invention involves the fabrication of a plasma-damage testing structure that includes a gate electrode positioned over an active area of a semiconductor substrate. The gate oxide layer lies beneath the gate electrode, and the active area features sharp corners to facilitate precise evaluation. By exposing this structure to a plasma environment and conducting electrical tests, the model enables accurate assessments of plasma damage to MOSFETs, significantly advancing the field of semiconductor reliability.

Career Highlights

Bor-Cheng Chen is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he applies his expertise to push the boundaries of semiconductor technology. His work has played a crucial role in enhancing the quality and durability of electronic devices, reflecting his commitment to innovation.

Collaborations

Throughout his career, Chen has collaborated with numerous talented professionals, including his coworkers Ho-Yin Yiu and Lin-June Wu. Together, they contribute to pioneering advancements in the semiconductor industry, showcasing the importance of teamwork in driving innovation.

Conclusion

Bor-Cheng Chen stands out as a leading inventor in the realm of semiconductor technologies. His latest patents demonstrate a commitment to improving device reliability through innovative methods. As he continues to work at Taiwan Semiconductor Manufacturing Company Limited, Chen’s contributions are sure to leave a lasting impact on the industry and inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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