Boontarika Thunnakart

Title: Boontarika Thunnakart: Patents in Antireflection Technology

Introduction

Boontarika Thunnakart is an inventor associated with Sony Corporation in Kanagawa, Japan. His patent work includes two inventions concerning antireflection films for semiconductor lithography.

Latest Patents

Thunnakart’s listed patents address antireflection films used during exposure in lithography systems.

“Antireflection Film and Exposure Method” describes a two-layer film positioned between a resist layer and a silicon substrate. It is designed to reduce reflectance at the interface, including when exposure light enters obliquely during liquid immersion lithography. The patent describes selecting the layers’ complex refractive indices and thicknesses to meet a specified relationship for exposure systems operating at wavelengths of 190 to 195 nanometers and with a numerical aperture of 1.0 or less.

“Antireflective Film and Exposure Method” concerns a two-layer film placed between a resist layer and a silicon oxide layer on a silicon substrate. It addresses exposure at wavelengths of 190 to 195 nanometers and numerical apertures from 0.93 to 1.2. The invention specifies relationships among the layers’ refractive indices, absorption characteristics, and thicknesses to support antireflective performance.

Thunnakart is credited with 2 patents in the information provided.

Career Highlights

Thunnakart’s listed patent contributions focus on optical materials and exposure processes used in semiconductor manufacturing. Both inventions seek to control reflections in lithography by coordinating the properties and dimensions of multilayer films.

Collaborations

The provided information identifies Nobuyuki Matsuzawa and Ken Ozawa as Thunnakart’s coworkers. It does not specify their roles in the listed patents.

Conclusion

Boontarika Thunnakart’s two listed patents reflect a focused contribution to antireflection film design for advanced lithography at Sony Corporation.