This inventor holds 1 USPTO granted patent. Top assignee: Rutgers, The State University of New Jersey. Active years: 2007.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2007
Title: The Innovations of Bog-Gi Kim
Introduction
Bog-Gi Kim is a notable inventor based in Busan, South Korea. He has made significant contributions to the field of magnetoresistance through his innovative research. His work focuses on the tunability of intergrain magnetoresistance in double perovskite materials.
Latest Patents
Bog-Gi Kim holds 1 patent related to the room temperature, low field intergrain magnetoresistance (IMR) of the double perovskite SrFeMoO. His findings reveal that the IMR is highly tunable by doping either calcium or barium into the strontium site. The chemical pressure exerted by the dopants alters the Curie temperature and magnetic softness. At optimal doping with SrBaFeMoO, the IMR reaches approximately 3.5% in 100 Oe and increases further in high fields. This unprecedented strength of IMR in a highly spin-polarized system opens new avenues for the application of novel magnetic materials in magnetic sensing and spin electronics.
Career Highlights
Bog-Gi Kim is affiliated with Rutgers, The State University of New Jersey, where he continues to advance his research in magnetoresistance. His work has garnered attention for its potential applications in various technological fields.
Collaborations
One of his notable collaborators is Sang-Wook Cheong, with whom he has worked on various research projects.
Conclusion
Bog-Gi Kim's innovative research and patent contributions significantly impact the field of magnetoresistance. His work paves the way for future advancements in magnetic materials and their applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile